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參數(shù)資料
| 型號(hào)： | MRF181SR1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 458B-02, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | MRF181SR1 |
LIFETIME
BUY
LAST
ORDER
31JUN04
LAST
SHIP
31JAN05
MRF181SR1 MRF181ZR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS1
—
1.0
Adc
Zero Gate Voltage Drain Current
(VDS = 65 Vdc, VGS = 0)
IDSS2
—
1.0
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 55 Adc)
VGS(th)
2.0
3.6
4.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
0.3
0.66
0.8
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 170 mAdc)
VGS(q)
3.5
—
5.5
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
13
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
6.6
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.69
—
pF
FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1.)
Common–Source Power Gain
(VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz,
f2 = 945.1 MHz, Min 15.5 dB)
Gps
15.5
17
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz,
f2 = 945.1 MHz)
η
30
32.5
—
%
Input Return Loss
(VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz,
f2 = 945.1 MHz)
IRL
—
–12.7
–9
dB
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz,
f2 = 945.1 MHz)
IMD
—
–30
–28.5
dBc
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 7.5 W CW, IDQ = 170 mA, f1 = 945 MHz,
Load VSWR = 5:1, All Phase Angles)
Ψ
No Degradation In Output Power
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