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參數(shù)資料
| 型號： | MRF18060A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 405K |
| 代理商： | MRF18060A |
1
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
Motorola, Inc. 2002
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
Excellent Thermal Stability
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
≥
25
°
C
Derate above 25
°
C
P
D
180
1.03
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.97
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18060A/D
SEMICONDUCTOR TECHNICAL DATA
1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18060A
CASE 465A–06, STYLE 1
NI–780S
MRF18060ALSR3, MRF18060ASR3
REV 5
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| MRF18060AR3 | RF POWER FIELD EFFECT TRANSISTORS |
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| MRF21085LSR3 | RF Power Field Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18060ALR3 | 功能描述:射頻MOSFET電源晶體管 60W GSM 1.8GHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF18060ALR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF18060ALR5 | 功能描述:射頻MOSFET電源晶體管 60W GSM 1.8GHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF18060ALSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060AR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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