參數(shù)資料
型號: MRF18030AR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-400, CASE 465E-04, 2 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 333K
代理商: MRF18030AR3
MRF18030AR3 MRF18030ALR3 MRF18030ASR3 MRF18030ALSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1950
10
16
1750
30
0
IRL @ 15 W
VDD = 26 Vdc
IDQ = 250 mA
T = 25
_C
f, FREQUENCY (MHz)
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
INPUT
RETURN
LOSS
(dB)
IRL,
G
ps
,POWER
GAIN
(dB)
Gps @ 15 W
Gps @ 30 W
IRL @ 30 W
15
5
14
10
13
15
12
20
11
25
1800
1850
1900
1920
0
40
1780
Pin = 2 W
VDD = 26 Vdc
IDQ = 250 mA
T = 25
_C
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
1 W
0.5 W
0.25 W
35
30
25
20
15
10
5
1800
1820
1840
1860
1880
1900
P
out
,
OUTPUT
POWER
(W
A
TTS)
P
out
,
OUTPUT
POWER
(W
A
TTS)
100
10
16
0.1
IDQ = 400 mA
300 mA
VDD = 26 Vdc
f = 1840 MHz
T = 25
_C
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
200 mA
100 mA
15
14
13
12
11
110
48
9
16
24
T = 25
_C
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
Pout, OUTPUT POWER (dBm)
Figure 6. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
55
_C
85
_C
15
14
13
12
11
10
26
28
30
32
34
36
38
40
42
44
46
100
9
0.1
VDD = 22 Vdc
30 V
IDQ = 250 mA
f = 1840 MHz
T = 25
_C
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
28 V
26 V
24 V
15
14
13
12
10
11
110
Gps
100
10
16
0.1
0
60
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
15
50
14
40
13
30
12
20
11
10
110
相關PDF資料
PDF描述
MRF18030AR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18030ASR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18030BLR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18030BR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF18030BSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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