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參數(shù)資料
| 型號： | MRF18030ALR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MRF18030ALR3 |
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RF Device Data
Freescale Semiconductor
MRF18030ALR3
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μAdc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.3
—
pF
Functional Tests (In Freescale Test Fixture) (2)
Output Power, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
P1dB
27
30
—
W
Common-Source Amplifier Power Gain @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
Gps
13
14
—
dB
Drain Efficiency @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
η
46.5
50
—
%
Input Return Loss @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
IRL
—
-12
-9
dB
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18030ALSR3 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18030ALSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18030BLR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18030BLSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF18030BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS |
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