參數(shù)資料
型號： MRF166
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： MOSFET BROADBAND RF POWER FETs
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 154K
代理商： MRF166
MRF166 MRF166C
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
—
—
1.0
mA
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0 V)
IGSS
—
—
1.0
μ
A
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
V
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
gfs
600
800
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Ciss
—
30
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Coss
—
35
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Crss
—
4.5
—
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)
NF
—
2.5
—
dB
MRF166C
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Gps
14
17
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,
Load VSWR 30:1 at All Phase Angles)
ψ
No Degradation in Output Power
MRF166
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Gps
15
19
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
η
55
65
—
%
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA,
Load VSWR 30:1 at All Phase Angles)
ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Zin
—
3.99 – j12.2
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Zout
—
14.15 – j6.51
—
Ohms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF166C 功能描述:射頻MOSFET電源晶體管 5-500MHz 20Watts 28Volt Gain 13.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF166W 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 8A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF171 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF171A 功能描述:射頻MOSFET電源晶體管 100-200MHz 45Watts 28Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF171AMP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
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