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參數(shù)資料
| 型號(hào)： | MRF1517NT1 |
| 廠(chǎng)商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | MRF1517NT1 |
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MRF1517NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 14 dB
Efficiency — 70%
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Excellent Thermal Stability
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage (1)
VDSS
-0.5, +25
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
4
Adc
Total Device Dissipation @ TC = 25°C (2)
Derate above 25°C
PD
62.5
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
RθJC
2
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. Not designed for 12.5 volt applications.
2. Calculated based on the formula PD =
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1517N
Rev. 7, 6/2009
Freescale Semiconductor
Technical Data
MRF1517NT1
520 MHz, 8 W, 7.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ– TC
RθJC
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1517NT1 | 制造商:Freescale Semiconductor 功能描述:Transistor |
| MRF1517NT1_08 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1517NT1-CUT TAPE | 制造商:Freescale 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF1517T1 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518N | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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