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參數(shù)資料
| 型號(hào)： | MRF148A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode VHF POWER MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.380 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 44K |
| 代理商： | MRF148A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
(BR)DSS
V
GS
= 0 V I
DS
= 10 mA
I
DSS
V
GS
= 0 V V
DS
= 50 V
I
GSS
V
GS
= 20 V V
DS
= 0 V
V
GS(th)
V
DS
= 10 V I
D
= 10 mA
V
DS(on)
V
GS
= 10 V I
D
= 2.5 A
G
FS
V
DS
= 10 V I
D
= 2.5 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
125
---
---
---
---
---
1.0
---
1.0
800
---
UNITS
V
mA
nA
V
V
mS
---
1.0
100
5.0
5.0
---
C
iss
C
oss
C
rss
V
DS
= 50 V V
GS
= 0 V f = 1.0 MHz
62
35
3.0
pF
P
G
η
D
V
DD
= 50 V
f = 30 MHz
I
DQ
= 100 mA P
OUT
= 30 W
18
40
dB
%
VHF POWER MOSFET
N-Channel Enhancement Mode
MRF148A
DESCRIPTION:
The
ASI MRF148A
is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
FEATURES:
P
G
= 15 dB Typ. at 30 W /175 MHz
η
D
=
50% Typ. at 30 W /30 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
DSS
V
DGO
V
GS
P
DISS
T
J
T
STG
θ
JC
6.0 A
120 V
120 V
±
40 V
115 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.52 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
G
S
D
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