參數(shù)資料
型號: MRF10005
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: Microwave Power Transistor, NPN Silicon(微波NPN硅射頻功率晶體管)
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CASE 336E-02, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 100K
代理商: MRF10005
MRF10005
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0)
Collector Cutoff Current (VCB = 28 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
55
Vdc
55
Vdc
3.5
Vdc
1.0
mAdc
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
20
100
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
7.0
10
pF
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
GPB
8.5
10.3
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
η
45
55
%
Load Mismatch
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1
μ
F
C5 — 47
μ
F/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8
ID, 0.18
Long
Z1–Z10 — Microstrip, see details below
Board Material — 0.030
Glass Teflon,
2.0 oz. Copper,
ε
r = 2.55
RF
INPUT
RF
OUTPUT
Z10
C1
28 Vdc
+
D.U.T.
Z1
Z3
Z2
Z4
Z5
Z6
Z7
Z8
C3
C4
C5
+
L1
C2
Z9
0.050
0.25
0.20
0.050
0.40
0.90
0.37
0.70
0.13
0.080
0.50
0.20
0.660
0.275
0.16
0.25
0.375
0.57
0.40
0.25
0.08
2
1
1
0
0
0
0
0
0
0
0
1
1
1
2
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