參數(shù)資料
型號： MRA1600-2
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù)： 1/4頁
文件大?。?/td> 58K
代理商： MRA1600-2
LIFETIME
BUY
LAST
ORDER
18/09/99
LAST
SHIP
18/03/00
1
MRA1600–2
MOTOROLA RF DEVICE DATA
The RF Line
Microwave Power Transistor
Designed primarily for large–signal output and driver amplifier stages for mobile
satellite up links.
Designed for Class C, Common Base Power Amplifiers
Specified 28 Volt, 1640 MHz Characteristics:
Output Power = 2.0 to 30 Watts
Power Gain = 7.0 to 8.4 dB (Min)
Collector Efficiency = 39% to 45% (Min)
Internally Compensated
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCES
50
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current – Continuous
IC
0.5
Adc
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, RF, Junction to Case (Rated Pout)
R
θJC
15
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
V(BR)CES
50
–
Vdc
Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0)
V(BR)EBO
3.5
–
Vdc
Collector Cutoff Current (VCB = 28 V, IE = 0)
ICBO
0.5
–
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 A, VCE = 5.0 V)
hFE
10
–
100
–
.
(continued)
Order this document
by MRA1600/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRA1600-2
7.0 – 8.4 dB
1600 – 1660 MHz
2.0 – 30 W
NARROWBAND MICROWAVE
POWER TRANSISTOR
CASE 394–03, STYLE 1
(MRA .25)
Motorola, Inc. 1997
REV 1
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