參數(shù)資料
型號: MRA0610-23
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.320 INCH, FM-2
文件頁數(shù): 1/1頁
文件大?。?/td> 52K
代理商: MRA0610-23
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 150 mA
50
V
BVEBO
IE = 2.0 mA
3.5
V
ICBO
VCB = 28 V
3.0
mA
hFE
VCE = 5.0 V
IC = 750 mA
10
100
---
Cob
VCB = 28 V
f = 1.0 MHz
21
pF
GPB
ηc
VCE = 28 V
Pout = 23 W
f = 600 MHz & 1.0 GHz
7.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRA0610-23
DESCRIPTION:
The
MRA0610-23 is designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
from 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
MAXIMUM RATINGS
IC
3.5 A (CONT)
VCES
50 V
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
3.0 °C/W
PACKAGE STYLE .320 2L FLG
1= COLLECTOR
2= BASE
3= EMITTER
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