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參數(shù)資料
| 型號： | MR758 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 整流器 |
| 英文描述： | 6 A, 800 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 120K |
| 代理商： | MR758 |
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
MR750
thru
MR760
6 Amp Rectifier
50 - 1000 Volts
Leaded Button
Features
Low Cost
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Low Leakage
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.332
.342
8.43
8.69
B
.234
.246
5.94
6.25
C
.165
.175
4.19
4.45
D
.050
.053
1.27
1.35
E
5
°
---
5
°
---
Nominal
K
.990
1.010
25.15
25.65
Maximum Ratings
Operating Temperature: -65
°C to +175°C
Storage Temperature: -65
°C to +175°C
Microsemi
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
MR750
50V
35V
50V
MR751
100V
70V
100V
MR752
200V
140V
200V
MR754
400V
280V
400V
MR756
600V
420V
600V
MR758
800V
560V
800V
MR760
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
6.0A
TA = 60
°C
Peak Forward Surge
Current
IFSM
400A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
0.90V
IFM = 6.0A;
TA = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
25
A
1.0mA
TJ = 25
°C
TJ = 100
°C
Typical Junction
Capacitance
CJ
225pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 1%
A
B
C
D
E
K
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