參數(shù)資料
型號(hào): MR2835S
廠商: MOTOROLA INC
元件分類: 參考電壓二極管
英文描述: OVERVOLTAGE TRANSIENT SUPPRESSOR
中文描述: UNIDIRECTIONAL, SILICON, TVS DIODE
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 111K
代理商: MR2835S
1
Motorola Power Products Division Device Data
. . . designed for applications requiring a diode with reverse avalanche characteris-
tics for use as reverse power transient suppressor.
Developed to suppress transients in the automotive system, this device operates
in reverse mode as power zener diode and will protect expensive modules such as
ignition, injection and autoblocking systems from overvoltage conditions.
High Power Capability
Economical
MAXIMUM RATINGS
Parameters
Symbol
Value
Unit
DC Blocking Voltage
VR
IRSM
23
V
Peak Repetitive Reverse Surge Current
(Time Constant = 10 ms, TC = 25
°
C)
62
A
Non Repetitive Peak Surge Current
(Halfwave, Single Phase, 50 Hz)
IFSM
400
A
Storage Temperature
Tstg
–40 to +150
°
C
Maximum Operating Junction Temperature
TJ
–40 to +150
°
C
THERMAL CHARACTERISTICS
Parameters
Symbol
Value
Unit
Thermal Resistance Junction to Case
RJC
1.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Instantaneous Forward Voltage (IF = 100 A) (1)
Reverse Current
(VR = 20 V) (1)
Breakdown Voltage (IZ = 100 mA) (1)
Breakdown Voltage (IZ = 80 A, TC = 85
°
C, PW = 80
μ
s)
Breakdown Voltage Temperature Coefficient
VF
IR
1.1
V
5.0
A
V(BR)
V(BR)
V(BR)TC
VFTC
24
32
V
40
V
0.09
%/
°
C
Forward Voltage Temperature Coefficient (IF = 10 mA)
–2.0*
mV/
°
C
MECHANICAL CHARACTERISTICS
Finish
All External Surfaces are Corrosion Resistant
Polarity
Cathode to Terminal
Weight
1.78 g*
Maximum Temperature for Soldering
260
°
C for 10 s Using Belt Furnace
1. Pulse Test: Pulse Width
<
300 s, Duty Cycle
<
2%.
* Typical
Figure 1. Load Dump Test Circuit
di/dt LIMITATION
100 H
MR2835S
2.0 OHMS
50 mF
0 – 150 V
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Order this document
by MR2835S/D
SEMICONDUCTOR TECHNICAL DATA
CASE 460–02
OVERVOLTAGE
TRANSIENT
SUPPRESSOR
24 V – 32 V
REV 1
相關(guān)PDF資料
PDF描述
MR760 HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION
MR852 FAST RECOVERY POWER RECTIFIERS 50.600 VOLTS 3.0 AMPERES
MR854 FAST RECOVERY POWER RECTIFIERS 50.600 VOLTS 3.0 AMPERES
MR856 FAST RECOVERY POWER RECTIFIERS 50.600 VOLTS 3.0 AMPERES
MR852 FAST RECOVERY RECTIFIER DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MR2835SK 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 62A 24-32V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
MR2835SKG 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 62A 24-32V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
MR28406 制造商:Knowles 功能描述:MICROPHONE WATER PROOF OMNI 制造商:Knowles 功能描述:MICROPHONE, WATER PROOF, OMNI
MR-28406 制造商:Knowles 功能描述:MICROPHONE -40DB OMNI 1KHZ 制造商:Knowles 功能描述:MICROPHONE, -40DB, OMNI, 1KHZ 制造商:Knowles 功能描述:MICROPHONE, -40DB, OMNI, 1KHZ; Transducer Function:Microphone; Directivity:Omnidirectional; Frequency Response Min:1kHz; Frequency Response Max:10kHz; Supply Voltage Min:900mV; Supply Voltage Max:20V; Sensitivity (dB):-61.5dB ;RoHS Compliant: Yes
MR-28406-000 功能描述:麥克風(fēng) -60 Sens, Std Rsp. Onmi, 30dB RoHS:否 制造商:Knowles Acoustics 方向性:Omnidirectional 阻抗:4.4 K Ohms 工作電壓:0.9 V to 10 V 靈敏度:- 53 dB 端接類型:Wire Leads 長(zhǎng)度:5.56 mm 寬度:3.98 mm 深度:2.21 mm