參數(shù)資料
型號(hào)： MR1S16AYS35
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PDSO44
封裝： 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44
文件頁(yè)數(shù)： 18/22頁(yè)
文件大小： 235K
代理商： MR1S16AYS35
Electrical Specifications
MR0A16A Advanced Information Data Sheet, Rev. 2
Freescale Semiconductor
5
Direct Current (dc)
Table 5. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Input leakage current
Ilkg(I)
——
±1
μA
Output leakage current
Ilkg(O)
——
±1
μA
Output low voltage
(IOL = +4 mA)
(IOL = +100 μA)
VOL
—
0.4
VSS + 0.2
V
Output high voltage
(IOH = –4 mA)
(IOH = –100 mA)
VOH
2.4
VDD – 0.2
——
V
Table 6. Power Supply Characteristics
Parameter
Symbol
Typ
Max
Unit
ac active supply current — read modes1
(IOut = 0 mA, VDD = max)
IDDR
55
80
mA
ac active supply current — write modes1
(VDD = max)
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
IDDW
105
155
165
mA
ac standby current
(VDD = max, E = VIH)
(no other restrictions on other inputs)
ISB1
18
28
mA
CMOS standby current
(E
≥ VDD – 0.2 V and VIn ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
(VDD = max, f = 0 MHz)
ISB2
912
mA
NOTES:
1
All active current measurements are measured with one address transition per cycle.
Table 7. Capacitance1
Parameter
Symbol
Typ
Max
Unit
Address input capacitance
CIn
—6
pF
Control input capacitance
CIn
—6
pF
Input/output capacitance
CI/O
—8
pF
NOTES:
1
f = 1.0 MHz, dV = 3.0 V, TA = 25°C, periodically sampled rather than 100% tested.
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