參數資料
型號: MR1A16AYS35
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述: 64K的x 16位的3.3V異步磁阻隨機存取內存
文件頁數: 1/20頁
文件大?。?/td> 148K
代理商: MR1A16AYS35
Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MR0A16A
Rev. 0, 6/2007
Freescale Semiconductor, Inc., 2007. All rights reserved.
This document contains information on a new product under development. Freescale
reserves the right to change or discontinue this product without notice.
Introduction
TheMR0A16Aisa1,048,576-bitmagnetoresistive
random access memory (MRAM) device
organized as 65,536 words of 16 bits. The
MR0A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR0A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR0A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR0A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standardcenterpowerandgroundSRAM
pinout.
The MR0A16A is available in Commercial (0C to
70C), Industrial (
-
40C to 85C) and Extended
(
-
40C to 105C) ambient temperature ranges.
Features
Single 3.3-V power supply
Commercial temperature range (0C to
70C), Industrial temperature range (
-
40C
to 85C) and Extended temperature range
(
-
40C to 105C)
Symmetrical
high-speed read and write with
fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
64K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
MR0A16A
44-TSOP
Case 924A-02
相關PDF資料
PDF描述
MR1S08AYS35 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR1S16AYS35 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A08AYS35 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MC68HC908JB12DW This section updates data sheet information and introduces the 20-pin SOIC
MC68HC908JB12JDW This section updates data sheet information and introduces the 20-pin SOIC
相關代理商/技術參數
參數描述
MR1D100R00TST 制造商:Vishay Semiconductors 功能描述:
MR1FB10L0 制造商:SEI Stackpole Electronics Inc 功能描述:RES 10M OHM 1% 1W 50PPM/ C TO 400PPM/ C AXL TH - Bulk 制造商:SEI Stackpole Electronics Inc 功能描述:Res Metal Film 0.01 Ohm 1% 1W ±50ppm/°C to ±400ppm/°C Molded AXL Thru-Hole Bulk
MR1FB20L0 制造商:SEI Stackpole Electronics Inc 功能描述:RES 1W 0.02 OHMS 1% - Bulk
MR1FB30L0 制造商:SEI Stackpole Electronics Inc 功能描述:RES 1W 0.03 OHMS 1% - Bulk
MR1FB50L0 制造商:SEI Stackpole Electronics Inc 功能描述:RES 1W 0.05 OHMS 1% - Bulk