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| 型號(hào)： | MQUPT33TR13E3 |
| 廠(chǎng)商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, POWERMITE-2 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 165K |
| 代理商： | MQUPT33TR13E3 |
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
Microsemi
Scottsdale Division
Page 2
Copyright
2007
6-26-2007 REV G
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
UPT5e3 – UPT48e3
UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
ELECTRICAL CHARACTERISTICS @ 25oC
DEVICE TYPE
(add e3 suffix)
RATED
STANDOFF
VOLTAGE
VWM
MINIMUM
BREAKDOWN
VOLTAGE
V(BR) @ 1 mA
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM
PEAK
PULSE
CURRENT*
IPP
MAXIMUM
CLAMPING
VOLTAGE
VC @ 10A*
MAXIMUM
TEMP.
COEFFICIENT
of V(BR)
αV(BR)
Unidirectional
Bi-directional
V
μA
A
V
%/
oC
UPT5
5
6.0
50
89.4
9.5
.030
UPT5R
5
6.0
5
60
9.5
.030
UPT8 & UPT8R
UPTB8
8
9.0
2
62.1
13.7
.040
UPT10 & UPT10R
UPTB10
10
11.0
2
47.2
18.0
.045
UPT12 &UPT12R
UPTB12
12
13.8
1
40.3
21.6
.050
UPT15 & UPT15R
UPTB15
15
16.7
1
33.9
26.0
.055
UPT17 & UPT17R
UPTB17
17
19.0
1
30.8
29.2
.060
UPT24 & UPT24R
UPTB24
24
28.4
1
22.0
43.2
.070
UPT28 &UPT28R
UPTB28
28
31.0
1
19.2
47.8
.075
UPT33 &UPT33R
UPTB33
33
36.8
1
16.4
56.7
.080
UPT48 &UPT48R
UPTB48
48
54.0
1
11.2
84.3
.090
* See Figure 1 for IPP waveform of 8/20 s
SYMBOLS & DEFINITIONS
Symbol
Definition
V(BR)
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
PPP
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
ID
Standby Current: The maximum current that will flow at the specified voltage and temperature.
IPP
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
C
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
OUTLINE AND CIRCUIT
decays to 50% of IPP.
(Rise time to 100% of IPP = 8μs.)
tp: Pulse time duration is defined as
that point where the pulse current
l P
–
PULSE
CUR
RENT
–
(%
of
I
PP
)
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
decays to 50% of IPP.)
P
PP
–
PEAK
PULSE
PO
WER
–
(W)
UPT5-48e
3
UPT5
R-4
8R
e3
UPTB8
-48
e3
UPT5
R-4
8R
e3
UPTB8
-48
e3
t – TIME – (
μs)
tp – PULSE TIME
FIGURE 1
FIGURE 2
Pulse Waveform for Exponential Surge
Peak Pulse Power vs. Pulse Duration
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
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| MVUPT5TR7E3 | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| MXUPT24TR7E3 | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| MXUPT28 | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| MXUPT48E3 | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| MXUPT48TR7E3 | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
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