- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄229496 > MQP4KE62CE3TR (MICROSEMI CORP-SCOTTSDALE) 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL PDF資料下載
參數(shù)資料
| 型號(hào)： | MQP4KE62CE3TR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MQP4KE62CE3TR |
400 Watt Transient Voltage Suppressor
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
P4KE6.8 thru P4KE400CA, e3
P4KE6.8
thru
400
GRAPHS
FIGURE 1
Test waveform parameters: tr=10
μs, tp=1000 μs
Peak Pulse Power vs. Pulse Time
FIGURE 2
Pulse Waveform for Exponential Surge
Microsemi
Scottsdale Division
Page 4
Copyright
2005
8-04-2005 REV C
Lead or Ambient Temperature
oC
V(BR) - Breakdown Voltage – Volts
FIGURE 3
FIGURE 4
Derating Curve
P4KE Typical Capacitance vs.
Breakdown Voltage (Unipolar)
PACKAGE
DIMENSIONS
NOTE: Cathode indicated
by band. All dimensions in
millimeters (inches)
C
–
Ca
pa
cita
nce
-
Pi
cofarads
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Average
Powe
rin
Percent
of
25
o C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MQP4KE68CAE3 | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| MQP6KE120AE3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MQP6KE51CE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MQP6KE51E3TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MQR5KP20CE3 | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MQP5 | 制造商:TE Connectivity 功能描述: |
| MQP5K | 制造商:TE Connectivity 功能描述: |
| MQP6 | 制造商:TE Connectivity 功能描述: |
| MQP6K | 制造商:TE Connectivity 功能描述: |
| MQP9 | 制造商:TE Connectivity 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。