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參數(shù)資料
| 型號： | MPSW63G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | MPSW63G |
MPSW63 MPSW64
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPSW63
MPSW64
(IC = 100 mAdc, VCE = 5.0 Vdc)
MPSW63
MPSW64
hFE
5,000
10,000
20,000
—
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
1.5
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
125
—
MHz
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| ftest.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
1.0
2.0
0.5
IC, COLLECTOR CURRENT (mA)
200
50
5.0
3.0
2.0
1.0
100
0.3
IC, COLLECTOR CURRENT (mA)
1.6
2.0
0.8
0.4
0
IB, BASE CURRENT (mA)
0.6
30
h FE
,DC
CURRENT
GAIN
(X1.0
k)
V,
VOL
TAGE
(VOL
TS)
10
20
7.0
100
200
50
70
3.0 5.0 10
50
2.0
1.6
1.4
1.2
1.0
30
70
300
5.0
3.0
0.7
30
100
300
1.2
0.3
100
0.1
1.0 3.0 10 30
300 1 k
V
,COLLECT
OREMITTER
VOL
TAGE
(VOL
TS)
CE
0.3
10
7.0
20
0.5
3 k 10 k
0.8
1.8
TJ = 25°C
IC = 10 mA
50 mA 100 mA 175 mA
300 mA
TJ = 25°C
IC/IB = 100
TJ = 125°C
25°C
55°C
10 V
VCE = 2.0 V
5.0 V
VBE(sat) @ IC/IB = 100
VCE(sat) @ IC/IB = 1000
VBE(on) @ VCE = 5.0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW63RLRA | 功能描述:達(dá)林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW63RLRAG | 功能描述:達(dá)林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW64 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt Darlington Transistors PNP Silicon |
| MPSW92 | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW92_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Voltage Transistor |
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