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參數(shù)資料
| 型號： | MPSW51RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 封裝： | LEAD FREE, CASE 29-10, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | MPSW51RLRAG |
MPSW51, MPSW51A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
MPSW51
MPSW51A
V(BR)CEO
30
40
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW51
MPSW51A
V(BR)CBO
40
50
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPSW51
(VCB = 40 Vdc, IE = 0)
MPSW51A
ICBO
0.1
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE
55
60
50
CollectorEmitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.7
Vdc
Base Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
50
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
30
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
MPSW51G
TO92
(PbFree)
5000 Units / Bulk
MPSW51AG
TO92
(PbFree)
5000 Units / Bulk
MPSW51RLRAG
TO92
(PbFree)
2000 / Tape & Reel
MPSW51ARLRPG
TO92
(PbFree)
2000 / Ammo Pack
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSW51RLRM | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RLRE | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RL1 | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARL | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARLRP | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MPSW55G | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:兩極晶體管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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