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參數(shù)資料
| 型號(hào)： | MPSW45ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 188K |
| 代理商： | MPSW45ZL1 |
One Watt Darlington
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW45
MPSW45A
Unit
Collector–Emitter Voltage
VCES
40
50
Vdc
Collector–Base Voltage
VCBO
50
60
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 Adc, VBE = 0)
MPSW45
MPSW45A
V(BR)CES
40
50
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
V(BR)CBO
50
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPSW45
(VCB = 40 Vdc, IE = 0)
MPSW45A
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
912
Publication Order Number:
MPSW45/D
MPSW45
MPSW45A
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
1
2
3
*
*ON Semiconductor Preferred Device
COLLECTOR 3
BASE
2
EMITTER 1
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| MPSW45ARL1 | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
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| MPSW51A | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51AG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRA | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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