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參數(shù)資料
| 型號(hào)： | MPSW14RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | MPSW14RL |
MPSW13 MPSW14
http://onsemi.com
907
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPSW13
MPSW14
(IC = 100 mAdc, VCE = 5.0 Vdc)
MPSW13
MPSW14
hFE
5,000
10,000
20,000
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
1.5
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
125
—
MHz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| ftest.
500
5.0
IC, COLLECTOR CURRENT (mA)
200 k
100 k
70 k
IB, BASE CURRENT (mA)
5.0
50
2.0
1.0
0.5
h FE
,DC
CURRENT
GAIN
,COLLECT
OR
EMITTER
VOL
TAGE
(VOL
TS)
50 k
20 k
30
10
20
100
200
10 20
0.5 1.0 2.0
1.5
2.5
3.0
0.1 0.2
100
V CE
TJ = 125°C
TJ = 25°C
IC =
50 mA
IC =
10 mA
IC =
500 mA
IC =
250 mA
1.5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0 k
2.0 k
1.0 k
500
200
20
I C
,COLLECT
OR
CURRENT
(mA)
2.0
5.0
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
TA = 25°C
TC = 25°C
1.0 ms
1.0 s
100 ms
Figure 1. Active Region — Safe Operating Area
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
7.0
70
50
300
10 k
7.0 k
5.0 k
2.0 k
30 k
3.0 k
VCE = 5.0 V
-55°C
25°C
500
200
1000
DUTY CYCLE ≤ 10%
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