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參數(shù)資料
| 型號： | MPSW06RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AE, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MPSW06RLRE |
MPSW05 MPSW06
http://onsemi.com
904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
hFE
80
60
—
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 250 mAdc, VCE = 5.0 Vdc)
VBE(sat)
—
1.2
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
—
12
pF
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
100
80
60
40
h FE
,DC
CURRENT
GAIN
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
300
500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS) 1.0
0.8
0.6
0.4
0.2
0
0.1
10
1.0
TJ = 25°C
IC = 10 mA
0.05
0.2
0.5
2.0
5.0
20
100 mA
250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V,
VOL
TAGE
(VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
200
20
TJ = 25°C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0
10
50
100
VBE(sat) @ IC/IB = 10
2.0
500
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| MPSW13RLRA | 功能描述:達林頓晶體管 1A 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSW13RLRAG | 功能描述:達林頓晶體管 1A 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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