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參數(shù)資料
| 型號(hào)： | MPSL01J05Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 293K |
| 代理商： | MPSL01J05Z |
MPSL01
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
MPSL01
This device is designed for general purpose, high voltage
amplifiers and gas discharge display driving. Sourced from
Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
120
V
VCBO
Collector-Base Voltage
140
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
MPSL01
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
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