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參數(shù)資料
| 型號(hào)： | MPSL01 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | MPSL01 |
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
120
Vdc
Collector–Base Voltage
VCBO
140
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
150
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
120
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0 )
V(BR)CBO
140
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
ICBO
—
1.0
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
100
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev.1
1
Publication Order Number:
MPSL01/D
MPSL01
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-L01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Transistors |
| MPSL01_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| MPSL01_D26Z | 功能描述:兩極晶體管 - BJT NPN General Purpose Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSL01_D26Z_Q | 功能描述:兩極晶體管 - BJT NPN General Purpose Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSL01_D27Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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