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參數(shù)資料
| 型號： | MPSH34 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | MPSH34 |
2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
M
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Junction and Storage Temperature
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
On Characteristics
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JC
Thermal Resistance, Junction to Case
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
40
40
4.0
50
-55 ~ +150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= 1.0mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30V, I
E
= 0
40
40
4.0
V
VV
nA
50
V
CE
= 2.0V, I
C
= 20mA
V
CE
= 15V, I
C
= 7.0mA
I
C
= 7.0mA, I
B
= 2.0mA
V
CE
= 15V, I
C
= 7.0mA
15
40
V
CE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
0.95
V
V
Current Gain Bandwidth Product
I
C
=15mA, V
CE
= 15V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
500
MHz
C
cb
Collector-Base Capacitance
0.32
pF
Parameter
Max.
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°
C/W
MPSH34
NPN General Purpose Amplifier
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base VHF oscillator
applications with high output levels for driving FET
mixers.
Sourced from process 47.
See MPSH11
for characteristics.
TO-92
1. Base 2. Emitter 3. Collector
1
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| MPSH34_D26Z | 功能描述:射頻雙極小信號晶體管 NPN Radio Freq Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPSH34_D75Z | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPSH34_Q | 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSH37 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 |
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