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參數(shù)資料
| 型號： | MPSH24J18Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 705K |
| 代理商： | MPSH24J18Z |
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100
A to
20 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47. See MPSH11
for characteristics.
MPSH24
MMBTH24
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3A
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
MPSH24
*MMBTH24
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
MPSH24
/
MMBTH24
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPSH30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-92 |
| MPSH31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | TO-92 |
| MPSH32 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
| MPSH34 | 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MPSH34_D26Z | 功能描述:射頻雙極小信號晶體管 NPN Radio Freq Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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