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參數(shù)資料
| 型號： | MPSH10J05Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 738K |
| 代理商： | MPSH10J05Z |
3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
3.0
V
ICBO
Collector Cutoff Current
VCB = 25 V, IE = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 2.0 V, IC = 0
100
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 4.0 mA, VCE = 10 V
60
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 4.0 mA, IB = 0.4 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 4.0 mA, VCE = 10 V
0.95
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
650
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.7
pF
Crb
Common-Base Feedback Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.35
0.65
pF
rb’Cc
Collector Base Time Constant
IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
9.0
pS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
MPSH10
/
MMBTH10
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| MPSH10L-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:RF TRANSISTOR |
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| MPSH10P | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSH10PSTOA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSH10PSTOB | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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