參數(shù)資料
型號(hào): MPSH10-T/R
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 122K
代理商: MPSH10-T/R
MT3S41T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=20mA, f=2GHz
11
15
-
GHz
|S21e|
2(1)
VCE=3V, IC=20mA, f=1GHz
13.5
15.5
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=20mA, f=2GHz
8
10
-
dB
NF(1)
VCE=3V, IC=5mA, f=1GHz
-
0.8
-
dB
Noise Figure
NF(2)
VCE=3V, IC=5mA, f=2GHz
-
1.2
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
1
A
DC Current Gain
hFE
VCE=3V, IC=20mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.9
1.4
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.55
0.9
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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