參數資料
型號: MPSH10-AP
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號晶體管
英文描述: Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數: 1/2頁
文件大?。?/td> 252K
代理商: MPSH10-AP
MPSH10
NPN RF
Transistor
Features
Capable of 0.35Watts of Power Dissipation.
Collector Current: 0.05A
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current
50
mA
PD
Power Dissipation
0.35
W
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1mAdc, IB=0)
25
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
30
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
3.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=25Vdc, IE=0)
---
0.1
uAdc
ICEO
Collector Cutoff Current
(VCE=20Vdc, IB=0)
0.2
uAdc
IEBO
Emitter Cutoff Current
(VEB=2.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS *
hFE
DC Current Gain
(IC=4mAdc, VCE=10Vdc)
60
200
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=4mAdc, IB=0.4mAdc)
---
0.5
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=4mAdc, VCE=10Vdc)
---
0.95
Vdc
fT
Transition Frequency
(VCE=10V, IC=4mA, f=100MHz)
650
---
MHz
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Marking:MPSH10
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
B
E
C
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