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參數(shù)資料
| 型號(hào)： | MPSA93 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | MPSA93 |
MPSA93
Epitaxial Planar PNP
Transistor
Features
Through Hole Package
150
Junction Temperature
Complementary to MPSA42/43
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-200
V
VCBO
Collector-Base Voltage
-200
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-500
mA
IE
Emitter Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
-200
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100Adc, IC=0)
-200
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
---
-0.25
Adc
IEBO
Emitter Cutoff Current
(VEB=-3.0Vdc, IC=0)
---
-0.1
Adc
OFF CHARACTERISTICS
*hFE
DC Current Gain
(VCE=-10Vdc, IC=-1.0mAdc)
(VCE=-10Vdc, IC=-10mAdc)
(VCE=-10Vdc, IC=-30mAdc)
25
40
25
---
*VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
---
-0.5
Vdc
*VBE(on)
Base-Emitter On Voltage
(IC=-20mAdc, IB=-2.0mAdc)
---
-0.9
Vdc
Small Signal Characteristics
fT
Current Gain Bandwidth Product
(IC=-10mAdc, VCE=-20Vdc, f=100MHz)
50
---
MHz
Cob
Collector Output Capacitance
(IE=0mAdc, VCB=-20Vdc, f=1MHz)
8.0
pF
* Pulse Test: Pulse Width
300s, Duty Cycle
2.0%
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TO-92
A
E
B
C
D
G
CB
E
Revision: 3
2006/05/15
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:A93
www.mccsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A93 | 制造商:MICRO-ELECTRONICS 制造商全稱(chēng):Micro Electronics 功能描述:PNP SILICON TRANSISTOR |
| MPSA93_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA93_D27Z | 功能描述:兩極晶體管 - BJT PNP High Vltg Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA93_D74Z | 功能描述:兩極晶體管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA93_Q | 功能描述:兩極晶體管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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