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參數(shù)資料
| 型號(hào)： | MPSA62RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 152K |
| 代理商： | MPSA62RLRE |
Darlington Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSA62
MPSA63
MPSA64
Unit
Collector–Emitter Voltage
VCES
–20
–30
Vdc
Collector–Base Voltage
VCBO
–20
–30
Vdc
Emitter–Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 Adc, VBE = 0)
MPSA62
MPSA63, MPSA64
V(BR)CES
–20
–30
—
Vdc
Collector Cutoff Current
(VCB= –15 Vdc, IE = 0)
MPSA62
(VCB = –30 Vdc, IE = 0)
MPSA63, MPSA64
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
—
–100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
884
Publication Order Number:
MPSA62/D
MPSA62
MPSA63
MPSA64
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
MPSA64 is a Preferred Device
COLLECTOR 3
BASE
2
EMITTER 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA63RL | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA62RL | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA64RL1 | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA64RLRE | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA63RL1 | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA63 | 功能描述:達(dá)林頓晶體管 PNP GP Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPS-A63 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILCON DARLINGTON TRANSISTORS |
| MPSA63 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR DARLINGTON TO-92 |
| MPSA63 | 制造商:Fairchild Semiconductor Corporation 功能描述:Darlington Bipolar Transistor Transistor |
| MPSA63_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Darlington Transistor |
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