- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96027 > MPSA56G-T92-K (UNISONIC TECHNOLOGIES CO LTD) 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | MPSA56G-T92-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | MPSA56G-T92-K |
MPSA56
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-082.B
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-4
V
Collector Current - Continuous
IC
-500
mA
Total device Dissipation
625
mW
Linear Derating Factor above
TA=25°С
PD
5
mW/°С
Total device Dissipation
1500
mW
Linear Derating Factor above
TC=25°С
PD
12
mW/°С
Junction Temperature
TJ
+125
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
200
Junction to Case
θJC
83.3
°С/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
BVCEO
IC=-1.0mA, IB=0
-80
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA, Ic=0
-4
V
Collector Cutoff Current
ICEO
VCE=-60V, IB=0
-0.1
μA
Collector Cutoff Current
ICBO
VCB=-80V, IE=0
-0.1
μA
ON CHARACTERISTICS
IC=-10mA, VCE=-1V
100
Dc Current Gain
hFE
IC=-100mA, VCE=-1V
100
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-100mA, IB=-10mA
-0.25
V
Base-Emitter On Voltage
VBE(ON)
IC=-100mA, VCE=-1V
-1.2
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note 2)
fT
IC=-100mA, VCE=-1V, f=100MHz
50
MHz
Note 1. Pulse test: PW<=300
μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA56L-T92-K | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56L-T92-B | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56J35Z | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56J61Z | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56T93 | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA56LRAG | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR PNP -80V |
| MPSA56L-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP MPSA56 |
| MPSA56L-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP MPSA56 |
| MPSA56R6RAG | 制造商:ON Semiconductor 功能描述: |
| MPSA56RA | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。