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參數(shù)資料
| 型號： | MPSA56 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型離散半導(dǎo)體元件 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 340K |
| 代理商： | MPSA56 |
MPSA55
MPSA56
PNP Silicon
Amplifier Transistor
TO-92
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Maximum Ratings
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
C
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
C
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(1)
(I
C
=1.0mAdc, I
B
=0) MPSA55
MPSA56
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
I
CES
Collector Cutoff Current
(V
CE
=60Vdc, I
B
=0)
I
CBO
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0) MPSA55
(V
CB
=80Vdc, I
E
=0) MPSA56
ONCHARACTERISTICS
(1)
h
FE(1)
DC Current Gain
(I
C
=10mAdc, V
CE
=1.0Vdc)
h
FE(2)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
V
BE(on)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=1.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain – Bandwidth Product
(3)
(I
C
=100mAdc, V
CE
=1.0Vdc,
f=100MHz) MPSA55
MPSA56
1.
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Rating
Rating
80
80
4.0
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Min
Max
Units
60
80
4.0
Vdc
Vdc
0.1
uAdc
0.1
0.1
uAdc
100
100
0.25
1.2
Vdc
Vdc
50
MHz
A
E
B
C
D
G
Pin Configuration
Bottom View
C
B
E
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
www.
mc c semi
.c om
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| MPSA55 | Amplifier Transistors |
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| MPSA55 | 50,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MPSA56 | Amplifier Transistors |
| MPSA55 | PNP General Purpose Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A56 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS |
| MPSA56 DIE | 制造商:Microchip Technology Inc 功能描述: |
| MPSA56 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA56,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA56\E6 | 功能描述:兩極晶體管 - BJT REORD 512-MPSA56 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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