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參數(shù)資料
| 型號： | MPSA42 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MPSA42 |
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
680
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
6V
IE=100A, IC=0
Collector Cut-Off
Current
ICBO
0.1
A
VCB=200V, IE=0
Emitter Cut-Off Current IEBO
0.1
A
VEB=6V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=20mA, IB=2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA*
Static Forward Current
Transfer Ratio
hFE
25
40
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
Transition
Frequency
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
6pF
VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
E-Line
TO92 Compatible
MPSA42
3-78
C
B
E
V
CE
(sat
)
C
ollector
-Emitte
rSa
tu
rat
io
n
V
o
lt
ag
e(
V
olts)
Safe operating area
TYPICAL CHARACTERISTICS
0.1
10
100
1.0
60
0.1
10
100
1.0
0
40
80
20
100
120
0.001
100
10
0.01
1A
0.1
1000
1
100ms
10ms
1ms
D.C.
200
0.2
0.1
10
100
0.3
1.0
200
0
100
40
160
80
60
120
140
20
VCE=10V
140
VCE=20V
Single Pulse Test at Tamb=25°C
VCE(sat) vs IC
hFE vs IC
fT vs IC
IC
-Co
llecto
rC
u
rr
en
tA
mp
s
VCE-Collector-Emitter Voltage (Volts)
IC-Collector Current (mA)
h
F
E
St
atic
F
o
rward
Cur
ren
tT
ra
n
s
fe
rR
a
ti
o
fT
T
ransition
Frequency
(MHz)
IC / IB=10
MPSA42
3-79
Not Recommended for New Design
Please Use ZTX457
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| MPSA42 | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A42 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
| MPSA42 AMO | 功能描述:兩極晶體管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42,126 | 功能描述:兩極晶體管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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