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參數(shù)資料
| 型號： | MPSA18D26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MPSA18D26Z |
MPSA18
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
MPSA18
This device is designed for low noise, high gain, applications at
collector currents from 1
A to 50 mA. Sourced from Process
07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
45
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
MPSA18
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
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