參數(shù)資料
型號(hào): MPSA18
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: Low Noise Transistor NPN Silicon(NPN低噪聲晶體管)
中文描述: 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 80K
代理商: MPSA18
MPSA18
http://onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
NOISE VOLTAGE
e
e
I
N
20
50 100 200
500 1k 2k
5k 10k 20k
50k 100k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
300 A
30 A
R
S
0
3.0 mA
1.0 mA
7.0
10
20
30
5.0
3.0
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
R
S
0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
I
C
= 10 mA
3.0 mA
1.0 mA
300 A
100 A
10 A
R
S
0
10
7.0
10
20
50 100 200
500 1k 2k
5k 10k 20k
50k 100k
0.1
0.2
0.3
1.0
0.7
0.5
2.0
3.0
5.0
10
20
50 100 200
500 1k 2k
5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
= 1.0 mA
500 A
100 A
10 A
100 Hz NOISE DATA
300
200
100
70
3.0
5.0
7.0
10
20
30
50
R
S
, SOURCE RESISTANCE (OHMS)
10
20
50 100 200
500 1k 2k
5k 10k 20k 50k 100k
V
N
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
3.0 mA
1.0 mA
300 A
100 A
30 A
10 A
10
20
50 100 200
500 1k
2k
5k 10k 20k 50k 100k
I
C
= 10 mA
300 A
100 A
30 A
3.0 mA
1.0 mA
10 A
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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MPSA18_D26Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA18_D26Z_Q 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA18_D27Z 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2