- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96019 > MPSA12 (ZETEX PLC) 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MPSA12 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 39K |
| 代理商： | MPSA12 |
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 SEPT 93
FEATURES
* 1 Watt power dissipation
* 1 Amp continuous current
* Minimum gain =8K at 250mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
12
V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
100
V
IC=100A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CES
100
V
IC=100A, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
12
V
IE=10A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=80V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=10V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.1
V
IC=250mA, IB=0.25mA
Base-Emitter
Saturation Voltage
VBE(sat)
2
V
IC=250mA, IB=0.25mA
Static Forward Current
Transfer Ratio
hFE
10K
8K
IC=100mA, VCE=5V*
IC=250mA, VCE=5V*
Transition
Frequency
fT
100
MHz
IC=100mA, VCE=5V
f=20MHz
*Measured under pulsed conditions. Pulse width =300s. Duty cycle ≤ 2%
E-Line
TO92 Compatible
C
B
E
MPSA12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPSA13-J22Z | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA13/D11Z-J22Z | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA13/D26Z-J22Z | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA13/D74Z-J22Z | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MPSA13/D81Z-J22Z | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A12 | 制造商:GESS 制造商全稱:GESS 功能描述:SILICON DARLINGTON TRANSISTORS |
| MPSA12 | 制造商:Fairchild Semiconductor Corporation 功能描述:Darlington Bipolar Transistor Leaded Pro |
| MPSA12_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| MPSA12_D26Z | 功能描述:達(dá)林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA12_D27Z | 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。