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參數(shù)資料
| 型號： | MPSA05-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 241K |
| 代理商： | MPSA05-BP |
MPSA05
NPN General
Purpose Amplifier
Features
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current, Continuous
500
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100ì Adc, IC=0)
4.0
---
Vdc
ICEO
Collector Cutoff Current
(VCE=60Vdc, IB=0)
---
0.1
uAdc
ICBO
Emitter Cutoff Current
(VCB=60Vdc, IE=0)
---
0.1
uAdc
O
N CHARACTERISTICS
hFE
DC Current Gain
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=100mAdc)
100
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
---
0.25
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=100mAdc, VCE=1.0Vdc)
---
1.2
Vdc
Small Signal Characteristics
fT
Current Gain Bandwidth Product
(IC=10mAdc, VCE=2.0Vdc, f=100MHz)
100
---
MHz
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
AE
B
C
D
G
TO-92
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Marking:MPSA05
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
E
B
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA05DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | CHIP |
| MPSA05DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | CHIP |
| MPSA05DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | CHIP |
| MPSA05G | 功能描述:兩極晶體管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA05RA | 功能描述:兩極晶體管 - BJT NPN Transistor Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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