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參數(shù)資料
| 型號(hào)： | MPS8098ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 196K |
| 代理商： | MPS8098ZL1 |
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
http://onsemi.com
848
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CEO
60
80
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CBO
60
80
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
MPS8098, MPS8099
MPS8598, MPS8599
V(BR)EBO
6.0
5.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
—
0.1
Adc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MPS8098, MPS8598
(VCB = 80 Vdc, IE = 0)
MPS8099, MPS8599
ICBO
—
0.1
Adc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
MPS8098, MPS8099
(VEB = 4.0 Vdc, IC = 0)
MPS8598, MPS8599
IEBO
—
0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
100
75
300
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.4
0.3
Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MPS8098, MPS8598
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPS8099, MPS8599
VBE(on)
0.5
0.6
0.7
0.8
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
150
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cobo
—
6.0
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cibo
—
25
30
pF
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle = 2.0%.
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