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參數(shù)資料
| 型號(hào)： | MPS8050J05Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MPS8050J05Z |
MPS8050
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 30 mA, IB = 025V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, IC = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 35 V, IE = 0
0.1
A
ICES
Collector-Cutoff Current
VCE = 20 V, IE = 0
75
nA
hFE
DC Current Gain
IC = 5.0 mA, VCE = 1.0
IC = 100 mA, VCE = 1.0
IC = 800 mA, VCE = 1.0
45
80
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
1.2
V
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 1.0%
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
ββ = 10
- 40 C
25 °C
125 °C
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
P30
1
10
100
1000
50
100
150
200
250
300
I
- COLLECTOR CURRENT (A)
h
-
T
Y
P
ICA
L
P
U
L
S
E
D
CUR
RE
N
T
G
A
IN
FE
- 40 C
25 °C
C
V
= 1V
CE
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
P30
10
100
1000
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
E
C
T
O
R
E
M
IT
T
E
R
VO
L
T
A
G
E
(V
)
C
CE
S
A
T
ββ = 10
- 40 C
25 °C
125 °C
Base Emitter ON Voltage vs
Collector Current
P30
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
EM
IT
T
E
R
O
N
V
O
LT
A
G
E
(
V
)
C
BE
O
N
V
= 1V
CE
- 40 C
25 °C
125 °C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS8050S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:KEC三極管 |
| MPS8097 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8098 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS8098_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| MPS8098_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
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