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參數(shù)資料
| 型號： | MPS651-AP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 227K |
| 代理商： | MPS651-AP |
MPS651
NPN Encapsulate
Transistors
Features
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
2
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
625
mW
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
80
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=80Vdc, IE=0)
---
100
nAdc
IEBO
Base Cutoff Current
(VEB=4Vdc, IC=0)
---
100
nAdc
TO-92
AE
B
C
D
G
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
TM
Micro Commercial Components
Switching and Amplifier Applications
hFE
DC Current Gain
(VCE=2.0Vdc, IC=50mAdc)
75
(VCE=2.0Vdc, IC=100mAdc)
75
(VCE=2.0Vdc, IC=1Adc)
75
(VCE=2.0Vdc, IC=2Adc)
40
VCE(sat)
Collector-Emitter Saturation Voltage
(I C=2Adc, IB=200mAdc)
0.5
Vdc
(I C=1Adc, IB=100mAdc)
0.3
Vdc
VBE(sat)
Base-Emitter saturation Voltage
(IC=1Adc, IB=100mA)
1.2
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=1Adc, VCE=2.0Vdc)
1.0
Vdc
f T
Transition frequency
(IC=50mAdc, VCE=5Vdc,f=100MHz)
75
MHz
www.mccsemi.com
1 of 3
Marking Code:MPS651
051
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
E
B
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS651G | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651RLRA | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651RLRAG | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS651RLRB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPS651RLRBG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors |
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