參數(shù)資料
型號(hào): MPS4250ARLRM
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 43K
代理商: MPS4250ARLRM
MPS4250
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 5.0 mA)
V(BR)CES
40
Vdc
Collector Emitter Sustaining Voltage (Note 1)
(IC = 5.0)
V(BR)CEO(sus)
40
Vdc
Collector Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
40
Vdc
Emitter Base Breakdown Voltage
(IE = 10 mA)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 50 V)
(VCB = 40 V, TA = 65°C)
ICBO
10
3.0
nA
mA
Emitter Cutoff Current
(VEB = 3.0 V)
IEBO
20
nA
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
hFE
250
Collector Emitter Saturation Voltage (Note 1)
(IC = 10 mA, IB = 0.5 mA)
VCE(sat)
0.25
Vdc
Base Emitter Saturation Voltage (Note 1)
(IC = 10 mA, IB = 0.5 mA)
VBE(sat)
0.9
Vdc
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 V, f = 1.0 MHz)
Cobo
6.0
pF
Input Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
Cibo
16
pF
SmallSignal Current Gain
(IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz)
(IC = 0.5 mA, VCE = 5.0 V, f = 20 MHz)
hfe
250
2.0
800
Noise Figure
(IC = 20 mA, VCE = 5.0 V, RS = 10 kW, f = 1.0 kHz, PBW = 150 Hz)
(IC = 250 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 kHz, PBW = 150 Hz)
NF
2.0
dB
1. Pulse Test: Pulse Width = 300
ms; Duty Cycle = 2.0%.
相關(guān)PDF資料
PDF描述
MPS4250ARLRMG 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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