
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–35
Vdc
Collector–Base Voltage
–40
Vdc
Emitter–Base Voltage
–25
Vdc
Collector Current — Continuous
–150
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
RJA(1)
RJC
Max
Unit
Thermal Resistance, Junction to Ambient
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–35
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–25
—
Vdc
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VBE = –10 Vdc, IC = 0)
IEBO
—
–100
nAdc
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS404A/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER