參數(shù)資料
型號(hào): MPS3906RLRA
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-226AA, 3 PIN
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 221K
代理商: MPS3906RLRA
MPS3906
http://onsemi.com
6
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZqJA(t) = r(t) w RqJA
TJ(pk) – TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19
Figure 18. Active–Region Safe Operating Area
TJ, JUNCTION TEMPERATURE (°C)
104
-40
I C
,COLLECT
OR
CURRENT
(nA)
Figure 19. Typical Collector Leakage Current
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
I C
,COLLECT
OR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
10-2
10-1
100
101
102
103
-20
0
+20 +40 +60 +80 +100 +120 +140 +160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 s
TC = 25°C
1.0 s
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0 8.0 10
20
40
TJ = 150°C
100 s
相關(guān)PDF資料
PDF描述
MPS3906RLRE 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS3906RLRB 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS3906RLRE 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS3906RLRP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS3906RLRM 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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