參數(shù)資料
型號(hào)： MPS3702
廠商： MICRO COMMERCIAL COMPONENTS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 878K
代理商： MPS3702
MPS3702
PNP General
Purpose Amplifier
Features
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
800
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
25
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100ìAdc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100ìAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=20Vdc, IE=0)
---
100
nAdc
IEBO
Base Cutoff Current
(VEB=3.0Vdc, IC=0)
---
100
nAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
TO-92
A
E
B
C
D
G
Revision: 4
2006/05/16
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
C B
E
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 3
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MPS3702_D75Z 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS3702_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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