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參數(shù)資料
| 型號： | MPS3646G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MPS3646G |
Switching Transistor
NPN Silicon
w This device is available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
15
Vdc
CollectorEmitter Voltage
VCES
40
Vdc
CollectorBase Voltage
VCBO
40
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
— 10 ms Pulse
IC
300
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
40
—
Vdc
CollectorEmitter Sustaining Voltage(1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
15
—
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65°C)
ICES
—
0.5
3.0
mAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 0.5 Vdc)
(IC = 300 mA, VCE = 1.0 Vdc)
hFE
30
25
15
120
—
CollectorEmitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mAdc)
(IC = 30 mA, IB = 3.0 mA, TA = 65°C)
VCE(sat)
—
0.2
0.28
0.5
0.3
Vdc
Base Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 300 mAdc, IB = 30 mA)
VBE(sat)
0.73
—
0.95
1.2
1.7
Vdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
t
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1
Publication Order Number:
MPS3646/D
MPS3646
ON Semiconductor Preferred Device
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS3646RLRA | 功能描述:兩極晶體管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS3646RLRAG | 功能描述:兩極晶體管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS3646RLRM | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 15V 0.3A 3-Pin TO-92 Tape and Ammo |
| MPS3693 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92 |
| MPS3693C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN TRANSISTOR |
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