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參數(shù)資料
| 型號(hào)： | MPS2907A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistors PNP Silicon(通用晶體管（PNP）) |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MPS2907A |
MPS2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1) (I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
Vdc
CollectorBase Breakdown Voltage (I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage (I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
CEX
50
nAdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 150
°
C)
I
CBO
0.01
10
Adc
Base Current (V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
B
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1)
h
FE
75
100
100
100
50
300
CollectorEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.4
1.6
Vdc
BaseEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
1.3
2.6
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Notes 1 and 2),
(I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
200
MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance (V
EB
= 2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
Ad ) (Fi
I
B1
= 15 mAdc) (Figures 1 and 5)
d )
t
on
45
ns
Delay Time
t
d
10
ns
Rise Time
t
r
40
ns
TurnOff Time
(V
CC
= 6.0 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
Ad ) (Fi
t
off
100
ns
Storage Time
t
s
80
ns
Fall Time
t
f
30
ns
1. Pulse Test: Pulse Width
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
300 s, Duty Cycle
2%.
0
0
16 V
200 ns
50
1.0 k
200
30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS2907A\E6 | 功能描述:兩極晶體管 - BJT REORD 511-PN2907A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907A_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MPS2907AG | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MPS2907A-H | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
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