參數(shù)資料
型號(hào)： MPQ2484
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 50 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116
封裝： PLASTIC, DIP-14
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 298K
代理商： MPQ2484
2–469
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25
°C
PD
500
4.0
900
7.2
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
0.825
6.7
2.4
19.2
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction
to Case
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
134
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70
26
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
—
20
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
20
nAdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ2483
MPQ2484
*Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
*
12
3
4
5
6
7
14
13
12
11
10
9
8
NPN
相關(guān)PDF資料
PDF描述
MPQ2483 50 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116
MPQ2907A 0.6 A, 60 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
MPQ2906 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
MPQ2907 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
MPQ3467 1 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
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