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參數(shù)資料
| 型號： | MPN7360 |
| 元件分類： | PIN二極管 |
| 英文描述： | 600 V, SILICON, PIN DIODE |
| 封裝： | DIE-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 680K |
| 代理商： | MPN7360 |
Revision Date: 10/5/09
These silicon PIN diodes feature fully passivated mesa
designs with Metelic’s tri-metalization for reliable operation
under the most demanding conditions.
Voltage Breakdown up to 800 Volts
Passivated mesa construction
Screening per MIL-PRF-19500
and MIL-PRF-38534 is available
Part Number
V
BR
Min.
V
C
J
Max.
pF
R
S
Max.
τ
Typ.
ns
Nominal
I-Region
Width
μm
Nominal
Contact
Diameter
mils
θ
JC
Max.
°C/W
Nominal
Chip Size
mils
MPN7453A
300
0.15
1.0
700
60
8
20
15 x 15
MPN7453B
400
0.20
0.9
2500
60
8
20
20 x 20
MPN7453C
300
0.25
0.7
1000
60
8
15
20 x 20
MPN7420
400
0.08
1.5
1000
100
5
30
15 x 15
MPN7330
300
0.40
0.5
500
30
10
15 x 15
MPN7360
600
1.0
0.4
2500
70
20
7
37 x 37
MPN7370
700
2.3
0.3
5000
70
40
5
64 x 64
MPN7380
800
0.6
0.5
2500
80
24
7
37 x 37
Test
Conditions
I
R=10 A
V
R = 50 V
I
F = 100mA
f = 100 MHz
I
F = 10 mA
I
R = 6 mA
50%
Recovery
High Power Si PIN Diodes
Parameters
Limit
Power Dissipation, P
DISS
Junction Temperature, T
J
+175°C
Storage Temperature, T
STG
-65°C to +200°C
Reverse Voltage, V
R
Rated V
BR
Description
Electrical Specifications, T
A = 25 °C
Features
Absolute Maximum Ratings
P
DISS =
175°C - T
C
Thermal Resistance θ
JC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPN7453B | 400 V, SILICON, PIN DIODE |
| MPN-7380 | 800 V, SILICON, PIN DIODE |
| MPN-7330 | 300 V, SILICON, PIN DIODE |
| MPND4005-B15 | 100 V, SILICON, PIN DIODE |
| MPND4005-B16 | 100 V, SILICON, PIN DIODE |
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