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參數(shù)資料
| 型號(hào)： | MPLAD30KP400CAE3 |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 336K |
| 代理商： | MPLAD30KP400CAE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01005 Rev D, November 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MPLAD30KP14A thru MPLAD30KP400CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Suppresses transients up to 30 kW @ 10/1000 s and 200 kW @ 8/20 s (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA
o
Class 5: MPLAD30KP14A to 400CA (short distance)
o
Class 5: MPLAD30KP14A to 220CA (long distance)
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3: MPLAD30KP14A to 400CA
o
Class 4: MPLAD30KP14A to 220CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: MPLAD30KP10A to 400CA
o
Class 3: MPLAD30KP14A to 220CA
o
Class 4: MPLAD30KP14A to 110CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 30
,000 watts at 10/1000 μs (also see Figures 1 and 2)
with impulse repetition rate (duty factor) of 0.05 % or less
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 C to +150 C
Thermal resistance: 0.5 C/W junction to case or 50C/W junction to ambient when mounted
on FR4 PC board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 250 watts at TC = 25 °C or 2.5 watts at TA = 25 °C when
mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional
devices only)
Solder temperatures: 260 C for 10 s (maximum)
SURFACE MOUNT 30,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 14 to 400 V standoff voltages (VWM)
- Fast response
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