
1
Motorola, Inc. 1996
Power Products Division
The MPIC2111 is a high voltage, high speed, power MOSFET and IGBT driver
with dependent high and low side referenced output channels designed for half–
bridge applications. Proprietary HVIC and latch immune CMOS technologies en-
able ruggedized monolithic construction. Logic input is compatible with standard
CMOS outputs. The output drivers feature a high pulse current buffer stage de-
signed for minimum driver cross–conduction. Internal deadtime is provided to
avoid shoot–through in the output half–bridge. The floating channel can be used to
drive an N–channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
Floating Channel Designed for Bootstrap Operation
Fully Operational to +600 V
Tolerant to Negative Transient Voltage
dV/dt Immune
Gate Drive Supply Range from 10 to 20 V
Undervoltage Lockout for Both Channels
CMOS Schmitt–triggered Inputs with Pull–down
Matched Propagation Delay for Both Channels
Internally Set Deadtime
High Side Output in Phase with Input
PRODUCT SUMMARY
600 V MAX
200 mA/420 mA
10 – 20 V
130 & 90 ns
700 ns
VOFFSET
IO+/–
VOUT
ton/off (typical)
Deadtime (typical)
VB
8
VCC
IN
COM
HO
VS
7
6
5
1
2
3
4
VB
8
VCC
IN
COM
HO
VS
7
6
5
1
2
3
4
LO
LO
PIN CONNECTIONS
(TOP VIEW)
8 LEADS DIP
MPIC2111P
8 LEAD SOIC
MPIC2111D
This document contains information on a new product. Specifications and information herein are subject
to change without notice.
REV 1
Order this document
by MPIC2111/D
SEMICONDUCTOR TECHNICAL DATA
Device
MPIC2111D
Package
SOIC
HALF–BRIDGE DRIVER
ORDERING INFORMATION
MPIC2111P
PDIP
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
8
1